Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1708-1710

  Bruls, D M ^a   Vugs, J W A M ^a   Koenraad, P M ^a   Salemink, H W M ^a   Wolter, J H ^a   Hopkinson, M ^b   Skolnick, M S ^b   Long, Fei ^c   Gill, S P A ^c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSITY OF LEICESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE HEIGHT; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DIMENSIONAL ANALYSIS; GAAS; GROWTH DIRECTIONS; INAS QUANTUM DOTS; INDIUM CONCENTRATION; LOW GROWTH RATE; MATRIX; PHOTOCURRENT MEASUREMENT; THEORETICAL MODELS; TRUNCATED PYRAMIDS;

INDIUM; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

INDIUM ALLOYS;

EID: 79956008217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504162     Document Type: Article

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