A finite-element study of strain fields in vertically aligned InAs islands in GaAs

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 1945-1950

  Benabbas, T ^a   Androussi, Y ^a   Lefebvre, A ^a  

^a UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION METHODS; CRYSTAL DEFECTS; FINITE ELEMENT METHOD; NUCLEATION; PROBABILITY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SUBSTRATES;

LATTICE MISMATCH; SPACER LAYERS; VERTICALLY ALIGNED ISLANDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032615373     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370991     Document Type: Article

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