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Volumn 85, Issue 7, 2004, Pages 1262-1264
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Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
NONRADIATIVE RECOMBINATION CENTERS;
SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);
STRANSKI-KRASTANOW GROWTH MODE;
BANDPASS FILTERS;
CHARGE COUPLED DEVICES;
CORRELATION METHODS;
EXCIMER LASERS;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MOLECULAR BEAM EPITAXY;
MULTILAYERS;
PHOTOLUMINESCENCE;
SELF ASSEMBLY;
THICKNESS CONTROL;
TRANSMISSION ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 4444237545
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1784524 Document Type: Article |
Times cited : (43)
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References (16)
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