Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5228-5230

  Hanke, M ^a,d   Schmidbauer, M ^a   Kohler R ^a   Syrowatka, F ^b   Gerlitzke, A K ^c   Boeck, T ^c  

^a HUMBOLDT UNIVERSITY   (Germany)

^b Interdisziplinares Zentrum fur Materialwissenschaften   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FREE ENERGY; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SUBSTRATES; THERMODYNAMICS;

LATTICE MISMATCH; MICROSCOPIC PARAMETERS; STRAIN RELAXATION; SURFACE STRESS;

LIQUID PHASE EPITAXY;

EID: 3142704299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759070     Document Type: Article

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