Highly regular self-organization of step bunches during growth of SiGe on Si(113)

Applied Physics Letters

Volumn 73, Issue 11, 1998, Pages 1535-1537

  Darhuber, A A ^a   Zhu, J ^b   Holy V ^a   Stangl, J ^a   Mikulik P ^a   Brunner, K ^b   Abstreiter, G ^b   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000093130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122197     Document Type: Article

References (11)

1. See, e.g., R. Nötzel, Semicond. Sci. Technol. 11, 1365 (1996) and references therein.
2. M. Yoon, S. G. Mochrie, M. Tate, S. Gruner, and E. Eikenberry, Phys. Rev. Lett. 80, 337 (1998) and references therein.
3. S. van Dijken, H. J. Zandvliet, and B. Poelsema, Phys. Rev. B 55, 7864 (1997) and references therein.
4. J. Knall and J. B. Pethica, Surf. Sci. 265, 156 (1992).
5. H. Omi and T. Ogino, Appl. Phys. Lett. 71, 2163 (1997).
6. Results on the whole series of samples will be presented elsewhere.
7. J. Tersoff, Y. H. Phang, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 75, 2730 (1995).
8. L. De Caro and L. Tapfer, Phys. Rev. B 48, 2298 (1993).
9. S. K. Sinha, E. B. Sirota, S. Garoff, and H. B. Stanley, Phys. Rev. B 38, 2297 (1988).
10. V. Holý, C. Giannini, L. Tapfer, T. Marschner, and W. Stolz, Phys. Rev. B 55, 9960 (1997).
11. V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nützel, and G. Abstreiter, Phys. Rev. B 57, 12 435 (1998).