Transistor Scaling to the Limit

Springer Series in Materials Science

Volumn 106, Issue , 2009, Pages 191-223

  Liu, T J K ^a   Chang, L ^b  

^a IBM TJ Watson Research Center ^*  (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electron Device; Gate Electrode; Gate Length; IEEE Electron Device; VLSI Technology

Indexed keywords

EID: 84929834527     PISSN: 0933033X     EISSN: 21962812     Source Type: Book Series    
DOI: 10.1007/978-3-540-74559-4_8     Document Type: Chapter

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