Does source-to-drain tunneling limit the ultimate scaling of MOSFETs?

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 707-710

  Wang, Jing ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTROSTATICS; GREEN'S FUNCTION;

SOURCE-DRAIN (S/D) TUNNELING;

MOSFET DEVICES;

EID: 0036930466     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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