Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 11, 2005, Pages 2455-2462

  Tsui, Bing Yue ^a,b   Lin, Chia Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

FinFET; Implant to silicide (ITS); Schottky barrier (SB); Silicon on insulator (SOI)

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DIFFRACTION; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

IMPLANT-TO-SILICIDE (ITS); MODIFIED SCHOTTKY BARRIER (MSB) FINFET; SOURCE/DRAIN EXTENSION (SDE);

MOSFET DEVICES;

EID: 27744473956     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.857178     Document Type: Article

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