Simulation of statistical variability in nano MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 86-87

  Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON BEAM LITHOGRAPHY; MOSFET DEVICES; PHOTORESISTS; POLYSILICON; ROUGHNESS MEASUREMENT;

DOUBLE-GATE (DG) DEVICES; LINE-EDGE ROUGHNESS (LER); MOSFETS; NANO CMOS; NANO MOSFETS; NUMERICAL SIMULATIONS; OXIDE THICKNESSES; PARAMETER FLUCTUATIONS; RANDOM DOPANTS; STATISTICAL VARIABILITY; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); VLSI TECHNOLOGIES;

STATISTICAL METHODS;

EID: 44849131962     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339737     Document Type: Conference Paper

References (7)

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4. A. R. Brown et al, Proc. ESSDERC 2006, 541 (2006)
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6. C. Alexander et al., IEDM Tech Dig, IEDM'06 (2006)
7. B. Cheng et al., Proc. ESSDERC 2004, 219 (2006)