Infusion processing solutions for USJ and localized strained-si using gas cluster ion beams

12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2004

Volumn , Issue , 2004, Pages 37-45

  Hautala, John ^a   Borland, John ^b  

^a Epion Corporation   (United States)

^b JOB Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS CLUSTER ION BEAM (GCIB); INFUSION PROCESSING; SOLID PHASE EPITAXY (SPE);

DEPOSITION; EPITAXIAL GROWTH; SILICON COMPOUNDS; SINGLE CRYSTALS; SOLUBILITY; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

ION BEAMS;

EID: 28344448969     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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