Improvement of FinFET electrical characteristics by hydrogen annealing

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 541-543

  Xiong, Weize ^a   Gebara, Gabriel ^b   Zaman, Joyti ^b   Gostkowski, Michael ^b   Nguyen, Billy ^b   Smith, Greg ^b   Lewis, David ^b   Cleavelin, C Rinn ^a   Wise, Rick ^a   Yu, Shaofeng ^a   Pas, Michael ^a   King, Tsu Jae ^c   Colinge, J P ^d  

^a TEXAS INSTRUMENTS   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; LITHOGRAPHY; MOS DEVICES; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

DRAIN INDUCED BARRIER LOWERING CHARACTERISTICS; ELECTRICAL CHARACTERISTICS; GATE LEAKAGE; HYDROGEN ANNEALING;

FIELD EFFECT TRANSISTORS;

EID: 3943054085     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.832787     Document Type: Article

References (12)

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