Boron retarded diffusion in the presence of indium or Germanium

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 646-648

  Li, Hong Jyh ^a   Kirichenko, Taras A ^a   Kohli, Puneet ^a   Banerjee, Sanjay K ^a   Graetz, Eric ^b   Tichy, Robin ^c   Zeitzoff, Peter ^c  

^a The University of Texas at Austin   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SEMATECH   (United States)

Author keywords

Diffusion process; Rapid thermal annealing (RTA); Semiconductor device ion implantation

Indexed keywords

AMORPHIZATION; BORON; DIFFUSION; GERMANIUM; INDIUM; ION IMPLANTATION; RAPID THERMAL ANNEALING;

PREAMORPHIZATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036863439     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805005     Document Type: Article

References (12)

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