Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 612-614

  Xiong, Wade ^a   Cleavelin, C Rinn ^a   Kohli, P ^a   Huffman, C ^a   Schulz, T ^b   Schruefer, K ^b   Gebara, G ^c   Mathews, K ^c   Patruno, P ^d   Le Vaillant, Yves Matthieu ^d   Cayrefourcq, I ^d   Kennard, M ^d   Mazure, C ^d   Shin, K ^e   Liu, T J King ^e,f  

^a TEXAS INSTRUMENTS   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c ATDF Advanced Technolgy Development Facility Inc   (United States)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f SYNOPSYS INC   (United States)

Author keywords

FinFET; Insulated gate FETs; MOS devices; Silicon on insulator (SOI) technology; Strained silicon

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); MOS DEVICES; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

FINFET MOBILITY; INSULATED GATE; STRAINED-SILICON;

FIELD EFFECT TRANSISTORS;

EID: 33745646107     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877714     Document Type: Article

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