Body effect in tri- and pi-gate SOI MOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 813-815

  Frei, James ^a   Johns, Chad ^a   Vazquez, Akaena ^a   Xiong, Weize ^b   Cleavelin, C Rinn ^b   Schulz, Thomas ^c   Chaudhary, Nirmal ^c   Gebara, Gabriel ^d   Zaman, Jyoti R ^d   Gostkowski, Michael ^d   Matthews, Kenneth ^d   Colinge, Jean Pierre ^a  

^a University of California   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d ATDF Inc   (United States)

Author keywords

Insulated gate FETs; MOS devices; Silicon on insulator (SOI) technology

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; ELECTRIC FIELDS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

CAPACITIVE COUPLING EFFECTS; PI-GATE MOSFET; TRI-GATE MOSFET;

MOSFET DEVICES;

EID: 10844274144     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.839223     Document Type: Article

References (12)

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