GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 180-182

  Ye, P D ^a   Wilk, G D ^a   Yang, B ^a   Kwo, J ^a   Chu, S N G ^a   Nakahara, S ^a   Gossmann, H J L ^a   Mannaerts, J P ^a   Hong, M ^a   Ng, K K ^a   Bude, J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC DEVICES; GATES (TRANSISTOR); HYSTERESIS; LEAKAGE CURRENTS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

ATOMIC LAYER DEPOSITION (ALD);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0042341502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590743     Document Type: Article

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