Scaling fully depleted SOI CMOS

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2095-2103

  Trivedi, Vishal P ^a   Fossum, Jerry G ^a  

^a University of Florida   (United States)

Author keywords

Energy quantization; FD SOI CMOS; MOSFET scaling; Short channel effects; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CARRIER-ENERGY QUANTIZATION; CHANNEL DOPING; POLYSILICON GATES; QUASI-TWO-DIMENSIONAL DEVICE ANALYSES; SHORT-CHANNEL EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0141940117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816915     Document Type: Article

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