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Journal of the Electrochemical Society

Volumn 145, Issue 4, 1998, Pages 1297-1303

Surface state generation of Mo gate metal oxide semiconductor devices caused by Mo penetration into gate oxide

(2) Amazawa, Takao a Oikawa, Hideo b

a NTT CORPORATION (Japan)

b Advanced Film Technology Inc (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; EVAPORATION; INTERFACES (MATERIALS); METALLIC FILMS; MOLYBDENUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SPUTTER DEPOSITION; SUBSTRATES;

SURFACE STATE DENSITY; SURFACE STATE GENERATION;

MOS DEVICES;

EID: 0032050874 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1838454 Document Type: Article

Times cited : (20)

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