Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 743-745

  Choi, Woo Young ^a   Park, Byung Gook ^b   Lee, Jong Duk ^b   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Seoul National University   (South Korea)

Author keywords

Subthreshold swing (SS); Tunneling field effect transistor (TFET)

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

GATE OXIDE; SUBTHRESHOLD SWING; TUNNELING FIELD-EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 34547850370     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901273     Document Type: Article

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