High performance damascene metal gate MOSFET's for 0.1 μm regime

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1028-1034

  Yagishita, Atsushi ^a   Saito, Tomohiro ^a   Nakajima, Kazuaki ^a   Inumiya, Seiji ^a   Akasaka, Yasushi ^a   Ozawa, Yoshio ^a   Hieda, Katsuhiko ^a   Tsunashima, Yoshitaka ^a   Suguro, Kyoichi ^a   Arikado, Tsunetoshi ^a   Okumura, Katsuya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum; Chemical mechanical polishing (CMP); Damascene; Metal gate; MOSFET; Process damage; Ta2o5; Tungsten

Indexed keywords

EID: 0000271715     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841237     Document Type: Article

References (11)

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