Suppression of Corner Effects in Triple-Gate MOSFETs

IEEE Electron Device Letters

Volumn 24, Issue 12, 2003, Pages 745-747

  Fossum, J G ^a   Yang, J W ^a   Trivedi, V P ^a  

^a University of Florida   (United States)

Author keywords

Multiple gate MOSFETs; Nanoscale CMOS devices; Threshold voltage control

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRONS; GATES (TRANSISTOR); POISSON EQUATION; POLYSILICON; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

AMELIORATION; CORNER EFFECTS;

MOSFET DEVICES;

EID: 0347131289     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.820624     Document Type: Article

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