Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 63-68

  Wu, Xusheng ^a   Chan, Philip C H ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

FinFET; Series resistance; Short channel effect (SCE); Silicon on insulator (SOI)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

FINFET; SERIES RESISTANCE; SHORT CHANNEL EFFECT (SCE);

FIELD EFFECT TRANSISTORS;

EID: 12344316066     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841334     Document Type: Article

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