A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 809-814

  Noda, K ^a   Tatsumi, T ^a   Uchida, T ^a   Nakajima, K ^a   Miyamoto, H ^a   Chenming Hu, ^b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Epitaxial growth; MOSFET's; silicon

Indexed keywords

CHANNEL DOPINGS; CHANNEL IMPLANTATION; CHANNEL LAYERS; FABRICATION TECHNOLOGIES; JUNCTION CAPACITANCES; MOS-FET; SELECTIVE EPITAXY; SHORT-CHANNEL EFFECT;

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; FABRICATION; SILICON;

MOSFET DEVICES;

EID: 0000115765     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662780     Document Type: Article

References (10)

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