Effect of fluorine on the diffusion of boron in ion implanted Si

Applied Physics Letters

Volumn 73, Issue 9, 1998, Pages 1263-1265

  Downey, Daniel F ^a   Chow, Judy W ^a   Ishida, Emi ^b   Jones, Kevin S ^c  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001633650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122146     Document Type: Article

References (12)

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5. D. F. Downey, US patent pending application.
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7. K. S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J. Berstein, and L. Rubin, J. Appl. Phys. 81, 6051 (1997).
8. D. F. Downey, US patent pending application.
9. D. F. Downey, W. R. Bottoms, and P. R. Hanley, Semicond. Sci. Technol., 72 (1982).
10. D. F. Downey, J. W. Chow, W. Lerch, J. Niess, and S. D. Marcus, RTP Proc. (to be published).
11. A. Agarwal, D. J. Eaglesham, H. J. Gossman, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, Y. Erokhin, and R. Simonton, Proc. IEDM, 467 (1997).
12. A. Agarwal, D. J. Eaglesham, H.-J. Gossman, S. B. Herner, L. Pelaz, and D. C. Jacobson, presented at the 1998 Spring MRS, Silicon Front-End Technology-Materials Processing and Modelling (unpublished).