Order and disorder in the heteroepitaxy of semiconductor nanostructures

Materials Science and Engineering R: Reports

Volumn 70, Issue 3-6, 2010, Pages 243-264

  Ratto, Fulvio ^a   Rosei, Federico ^b  

^a CNR   (Italy)

^b INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

Author keywords

Epitaxial nanostructures; Lithography; Self ordering; Self organization; Semiconductor heteroepitaxy; Substrate patterning

Indexed keywords

ARTIFICIAL ATOMS; BUILDING BLOCKES; CARRIER ENERGY; CHARGE INTERACTIONS; COMPLEX ARCHITECTURES; CONFINEMENT POTENTIAL; CRITICAL ISSUES; DE BROGLIE WAVELENGTH; DISCRETE SPECTRUM; ELECTRONIC COMPONENT; EPITAXIAL NANOSTRUCTURES; HETEROEPITAXY; INFORMATION AND COMMUNICATION TECHNOLOGIES; INHOMOGENEITIES; LENGTH SCALE; MATERIALS SCIENCE AND TECHNOLOGY; MUTUAL INTERACTION; NEAREST NEIGHBOUR; OPTICAL DETECTORS; ORDER AND DISORDER; OTHER APPLICATIONS; PHYSICAL AND CHEMICAL PROPERTIES; QUANTUM BITS; QUANTUM CELLULAR AUTOMATA; QUANTUM DOT; QUANTUM WELL; SELF ORDERING; SELF-ORGANIZATIONS; SEMICONDUCTOR HETEROEPITAXY; SEMICONDUCTOR NANOSTRUCTURES; SINGLE PHOTONS; SPATIAL DIMENSION; SPIN INTERACTION; STRAIN RELIEF; STRANSKI-KRASTANOV GROWTH MODE; STRONG CONFINEMENT; SYNTHESIS AND CHARACTERIZATIONS; THREE-DIMENSIONAL ARCHITECTURE; THREE-DIMENSIONAL ISLANDS; TOPDOWN; VOLMER-WEBER GROWTH MODE; WETTING LAYER; WHITE LIGHT SOURCES;

ATOMIC SPECTROSCOPY; CELLULAR AUTOMATA; CHARACTERIZATION; CHEMICAL PROPERTIES; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; INNOVATION; LATTICE MISMATCH; LIGHT SOURCES; MOSFET DEVICES; MULTIPHOTON PROCESSES; PATTERN RECOGNITION SYSTEMS; QUANTUM ENTANGLEMENT; QUANTUM WELL LASERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THREE DIMENSIONAL; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 78649325430     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2010.06.011     Document Type: Conference Paper

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