2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 157-159

  Raiteri, P ^a   Celino, M ^b   Valentinotti, F ^c   Miglio, L ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b ENEA C R CASACCIA   (Italy)

^c Quadrics Supercomputer World Limited   (Italy)

Author keywords

Dots; Epitaxy; Germanium; Silicon

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; MORPHOLOGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THIN FILMS;

WETTING LAYERS;

SEMICONDUCTING SILICON;

EID: 0037074847     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00823-6     Document Type: Conference Paper

References (10)