Stress induced surface melting during the growth of the Ge wetting layer on Si(0 0 1) and Si(1 1 1)

Applied Surface Science

Volumn 195, Issue 1-4, 2002, Pages 16-19

  Rosei, F ^a,b   Raiteri, P ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Ge film; Heteroepitaxial stress; Hydrostatic pressure; Semiconductor quantum dots

Indexed keywords

FILM GROWTH; HYDROSTATIC PRESSURE; MATHEMATICAL MODELS; MELTING; PHASE DIAGRAMS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRESS ANALYSIS; SURFACES;

SURFACE MELTING;

SURFACE CHEMISTRY;

EID: 0037099429     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)01051-0     Document Type: Article

References (30)