Investigating the lateral motion of SiGe islands by selective chemical etching

Surface Science

Volumn 600, Issue 12, 2006, Pages 2608-2613

  Katsaros, G ^a   Rastelli, A ^a   Stoffel, M ^a   Isella, G ^b   Känel, H von ^b   Bittner, A M ^a   Tersoff, J ^c   Denker, U ^a   Schmidt, O G ^a   Costantini, G ^a   Kern, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b POLITECNICO DI MILANO   (Italy)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Atomic force microscopy; Epitaxy; Etching; Germanium; Morphology; Roughness and topography; Silicon; Surface structure

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; EPITAXIAL GROWTH; ETCHING; GERMANIUM; MONOLAYERS; SURFACE ROUGHNESS;

POST GROWTH ANNEALING; ROUGHNESS AND TOPOGRAPHY; SELECTIVITY; SURFACE STRUCTURES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33746840111     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.04.027     Document Type: Article

References (28)

1. Sangwal K. Etching of Crystals (1987), North-Holland, Amsterdam
2. Schmidt O.G., Denker U., Christiansen S., and Ernst F. Appl. Phys. Lett. 81 (2002) 2614
3. Denker U., Stoffel M., and Schmidt O.G. Phys. Rev. Lett. 90 (2003) 196102
4. Katsaros G., Costantini G., Stoffel M., Esteban R., Bittner A.M., Rastelli A., Denker U., Schmidt O.G., and Kern K. Phys. Rev. B 72 (2005) 195320
5. Kern W. Handbook of Semiconductor Wafer Cleaning Technology (1993), Noyes Publications, Park Ridge, NJ
6. Denker U., Rastelli A., Stoffel M., Tersoff J., Katsaros G., Costantini G., Kern K., Jin-Phillipp N.Y., Jesson D.E., and Schmidt O.G. Phys. Rev. Lett. 94 (2005) 216103
7. Kamins T.I., Medeiros-Ribeiro G., Ohlberg D.A.A., and Williams R.S. Appl. Phys. A 67 (1998) 727
8. Chaparro S.A., Drucker J., Zhang Y., Chandrasekhar D., McCartney M.R., and Smith D.J. Phys. Rev. Lett. 83 (1999) 1199
9. Boscherini F., Capellini G., Di Gaspare L., Rosei F., Motta N., and Mobilio S. Appl. Phys. Lett. 76 (2000) 682
10. Malachias A., Kycia S., Medeiros-Ribeiro G., Magalhães-Paniago R., Kamins T.I., and Williams R.S. Phys. Rev. Lett. 91 (2003) 176101
11. Schülli T.U., Stoffel M., Hesse A., Stangl J., Lechner R.T., Wintersberger E., Sztucki M., Metzger T.H., Schmidt O.G., and Bauer G. Phys. Rev. B 71 (2005) 035326
12. Denker U., Schmidt O.G., Jin-Phillipp N.Y., and Eberl K. Appl. Phys. Lett. 78 (2001) 3723
13. Fitzgerald E.A., Xie Y.-H., Green M.L., Brasen D., Kortan A.R., Michel J., Mii Y.-J., and Weir B.E. Appl. Phys. Lett. 59 (1991) 811
14. Isella G., Chrastina D., Rößner B., Hackbarth T., Herzog H., König U., and von Känel H. Solid-state Electron. 48 (2004) 1317
15. Fitzgerald E., Wu K.C., Currie M., Gerrish N., Bruce D., and Borenstein J. Mat. Res. Soc. Symp. Proc. 518 (1998) 233
16. Johnson F.S., Miles D.S., Grider D.T., and Wortman J.J. J. Electron. Mat. 21 (1992) 805
17. Müller E., Nissen H.-U., Ospelt M., and von Känel H. Phys. Rev. Lett. 63 (1989) 1819
18. Venezuela P., Tersoff J., Floro J.A., Chason E., Follstaedt D.M., Liu F., and Lagally M. Nature 397 (1999) 678
19. Malachias A., Schülli T.U., Medeiros-Ribeiro G., Cançado L.G., Stoffel M., Schmidt O.G., Metzger T.H., and Magalhães-Paniago R. Phys. Rev. B 72 (2005) 165315
20. Sutter E., Sutter P., and Bernard J.E. Appl. Phys. Lett. 84 (2004) 2262
21. M. Stoffel, A. Rastelli, T. Merdzhanova, O.G. Schmidt, submitted for publication.
22. Medeiros-Ribeiro G., Bratkovski A.M., Kamins T.I., Ohlberg D.A.A., and Williams R.S. Science 279 (1998) 353
23. Ross F.M., Tromp R.M., and Reuter M.C. Science 286 (1999) 1931
24. Montalenti F., Raiteri P., Migas D.B., von Känel H., Rastelli A., Manzano C., Costantini G., Denker U., Schmidt O.G., Kern K., and Miglio L. Phys. Rev. Lett. 93 (2004) 216102
25. Kamins T.I., Medeiros-Ribeiro G., Ohlberg D.A.A., and Williams R.S. J. Appl. Phys. 85 (1999) 1159
26. Stoffel M., Rastelli A., Kiravittaya S., and Schmidt O.G. Phys. Rev. B 72 (2005) 205411
27. Rastelli A., Kummer M., and von Känel H. Phys. Rev. Lett. 87 (2001) 256101
28. Henstrom W.L., Liu C.-P., Gibson J.M., Kamins T.I., and Williams R.S. Appl. Phys. Lett. 77 (2000) 1623