Stress, strain and elastic energy at nanometric Ge dots on Si(0 0 1)

Applied Surface Science

Volumn 188, Issue 1-2, 2002, Pages 4-8

  Raiteri, P ^a   Valentinotti, F ^b   Miglio, L ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b Quadrics Supercomputer World Limited   (Italy)

Author keywords

Dots; Epitaxy; Germanium; Silicon; Strain; Stress

Indexed keywords

BOUNDARY CONDITIONS; ELASTICITY; MOLECULAR DYNAMICS; QUENCHING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SIMULATED ANNEALING; STRAIN; STRESSES;

DOTS; ELASTIC ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037070668     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00702-4     Document Type: Article

References (11)