Influence of patterning on the nucleation of Ge islands on Si and SiO2 surfaces

Surface Science

Volumn 601, Issue 13, 2007, Pages 2778-2782

  Szkutnik, P D ^a   Sgarlata, A ^b   Motta, N ^c   Placidi, E ^d   Berbezier, I ^a   Balzarotti, A ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c QUEENSLAND UNIVERSITY OF TECHNOLOGY   (Australia)

^d INFM   (Italy)

Author keywords

Ge nanostructures; Nucleation site; Patterned surfaces; Si; SiO2

Indexed keywords

ATOMIC FORCE MICROSCOPY; FOCUSED ION BEAMS; GERMANIUM; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICA;

ISLAND ARRAYS; NUCLEATION SITE; SELF-ORGANIZATION MECHANISM; SURFACE PATTERNING;

SURFACE TREATMENT;

EID: 34250718718     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.12.090     Document Type: Article

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