Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)

Physical Review Letters

Volumn 93, Issue 21, 2004, Pages

  Montalenti, F ^a   Raiteri, P ^a   Migas, D B ^a   Von Kanel H ^b   Rastelli, A ^b,c   Manzano, C ^c   Costantini, G ^c   Denker, U ^c   Schmidt, O G ^c   Kern, K ^c   Miglio, Leo ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FACETS; HIGH RESOLUTION SCANNING TUNNELING MICROSCOPY; KINETIC MODEL; MORPHOLOGICAL TRANSITIONS;

APPROXIMATION THEORY; INTERFACIAL ENERGY; MATHEMATICAL MODELS; MONOLAYERS; MORPHOLOGY; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SILICON; THERMODYNAMICS; ULTRAHIGH VACUUM;

GERMANIUM;

EID: 42749103632     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett93.216102     Document Type: Article

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23. In such simulations, we randomly selected 35% of the pyramid atoms, changed their type from Ge to Si, and allowed for site exchanges within the pyramid through a standard equilibrium Monte Carlo simulation.