Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (0 0 1) thin films

Surface Science

Volumn 600, Issue 11, 2006, Pages

  Poydenot, V ^a   Dujardin, R ^a   Rouviere J L ^a   Barski, A ^a   Meziere J ^b   Fournel, F ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

Germanium nanostructures; Molecular beam epitaxy; Molecular bonding; Ordered growth

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THIN FILMS;

GERMANIUM NANOSTRUCTURES; MOLECULAR BONDING; ORDERED GROWTH; TILT DISLOCATION ARRAY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646916930     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.03.020     Document Type: Article

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