Two-dimensional arrays of nanometre scale holes and nano-V-grooves in oxidized Si wafers for the selective growth of Ge dots or Ge/Si hetero-nanocrystals

Nanotechnology

Volumn 15, Issue 11, 2004, Pages 1695-1700

  Olzierski, A ^a   Nassiopoulou, A G ^a   Raptis, I ^b,c   Stoica, T ^b,c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c Institute of Atomic Physics   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; GERMANIUM COMPOUNDS; LITHOGRAPHY; MOSFET DEVICES; SEMICONDUCTOR DEVICES; SILICON WAFERS;

CHEMICAL ETCHING; MOSFET; NANOCRYSTALS; TUNNELING OXIDE;

NANOSTRUCTURED MATERIALS;

EID: 9744235859     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/11/056     Document Type: Article

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