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Volumn 9, Issue 1-3, 2006, Pages 96-101
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Properties of dislocation networks formed by Si wafer direct bonding
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Author keywords
Dislocation network; EBIC; Si wafer direct bonding
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Indexed keywords
BONDING;
ELECTRON BEAMS;
NANOSTRUCTURED MATERIALS;
NANOTECHNOLOGY;
PHOTOLUMINESCENCE;
THERMAL EFFECTS;
DISLOCATION NETWORKS;
ELECTRON-BEAM-INDUCED CURRENT (EBIC);
SI WAFER DIRECT BONDING;
SILICON WAFERS;
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EID: 33744828985
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2006.01.070 Document Type: Article |
Times cited : (19)
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References (14)
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