Properties of dislocation networks formed by Si wafer direct bonding

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 96-101

  Yu, X ^a,b   Arguirov, T ^b   Kittler, M ^a,b   Seifert, W ^a,b   Ratzke, M ^b   Reiche, M ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Dislocation network; EBIC; Si wafer direct bonding

Indexed keywords

BONDING; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTOLUMINESCENCE; THERMAL EFFECTS;

DISLOCATION NETWORKS; ELECTRON-BEAM-INDUCED CURRENT (EBIC); SI WAFER DIRECT BONDING;

SILICON WAFERS;

EID: 33744828985     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.070     Document Type: Article

References (14)

1. Calzecchi F., Gondi P., and Shintu F. Nuovo Cimento (1968)
2. Mil'shtein S, Nikitenko V. Russian Patent 348129; May 1979.
3. Laako C., and Matare H. Defect electronics in semiconductors (1971), Wiley, New York
4. Mil'shtein S. Mater Res Soc 46 (1985) 487
5. Kveder V., Kittler M., and Schröter W. Phys Rev B 63 (2001) 115208-1
6. Reiche M., Scheerschmidt K., Conrad D., Scholz R., Plößl A., Gösele U., et al. Inst Phys Conf Ser 157 (1997) 447
7. Kittler M, Yu X, Vyvenko O, Birkholz M, Seifert W, Reiche M, et al. E-MRS Spring Meeting 2005, Strasbourg, France, Mater Sci Eng C, in press.
8. Higgs V., Lightowlers E.C., and Tajbakhsh S. Appl Phys Lett 61 (1992) 1087
9. Izotov A.N., Kolyubakin A.I., Shevehenko S.A., and Steinman E.A. Phys Status Solidi A 130 (1992) 193
10. Kveder V., Badylevich M., Steinman E., and Izotov A. Appl Phys Lett 84 (2004) 2106
11. Aspar B., Bruel M., Moriceau H., Maleville C., Poumeyrol T., Papon A.M., et al. Microelectron Eng 36 (1997) 233
12. Pandelov S., Seifert W., Kittler M., and Reif J. J Phys: Condens Matter 14 (2002) 13161
13. Nonnenmacher M., O'Boyle M.P., and Wickramasinghe H.K. Appl Phys Lett 58 (1991) 2921
14. Kittler M, Reiche M, Arguirov T, Seifert W, Yu X. IEDM Technical Digest 2005, pp. 1027-1030.