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Volumn 9, Issue 1-3, 2006, Pages 96-101

Properties of dislocation networks formed by Si wafer direct bonding

Author keywords

Dislocation network; EBIC; Si wafer direct bonding

Indexed keywords

BONDING; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTOLUMINESCENCE; THERMAL EFFECTS;

EID: 33744828985     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.070     Document Type: Article
Times cited : (19)

References (14)
  • 2
    • 33744781157 scopus 로고    scopus 로고
    • Mil'shtein S, Nikitenko V. Russian Patent 348129; May 1979.
  • 7
    • 33744782444 scopus 로고    scopus 로고
    • Kittler M, Yu X, Vyvenko O, Birkholz M, Seifert W, Reiche M, et al. E-MRS Spring Meeting 2005, Strasbourg, France, Mater Sci Eng C, in press.
  • 14
    • 33744790447 scopus 로고    scopus 로고
    • Kittler M, Reiche M, Arguirov T, Seifert W, Yu X. IEDM Technical Digest 2005, pp. 1027-1030.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.