Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Bernardi, A ^a   Alonso, M I ^a   Goni A R ^a   Osso J O ^a   Garriga, M ^a  

^a CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CONCENTRATION (PROCESS); DEPOSITION; MONOLAYERS; REACTION KINETICS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON;

ADATOM MOBILITY; BUFFER LAYERS; DOT DENSITY; SUBMONOLAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748487187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349317     Document Type: Article

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