-
2
-
-
0035337918
-
Epitaxially self-assembled quantum dots
-
Petroff, PM, Lorke, A, and Imamoglu, A. 2001. Epitaxially self-assembled quantum dots. Phys. Today, 54:46
-
(2001)
Phys. Today
, vol.54
, pp. 46
-
-
Petroff, P.M.1
Lorke, A.2
Imamoglu, A.3
-
3
-
-
0000752475
-
Coupled quantum dots as artificial molecules
-
Kouwenhoven, L. 1995. Coupled quantum dots as artificial molecules. Science, 268:1440
-
(1995)
Science
, vol.268
, pp. 1440
-
-
Kouwenhoven, L.1
-
4
-
-
28844476121
-
Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution
-
Kiravittaya, S, Rastelli, A, and Schmidt, OG. 2005. Self-assembled InAs quantum dots on patterned GaAs(001) substrates:Formation and shape evolution. Appl. Phys. Lett., 87:243112
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 243112
-
-
Kiravittaya, S.1
Rastelli, A.2
Schmidt, O.G.3
-
5
-
-
2442668161
-
Nanostructured surfaces: challenges and frontiers in nanotechnology
-
Rosei, F. 2004. Nanostructured surfaces:challenges and frontiers in nanotechnology. J. Phys.:Cond. Matt., 16:S1373
-
(2004)
J. Phys.: Cond. Matt
, vol.16
, pp. S1373
-
-
Rosei, F.1
-
6
-
-
27144434143
-
Engineering atomic and molecular nanostructures at surfaces
-
Barth, JV, Costantini, G, and Kern, K. 2005. Engineering atomic and molecular nanostructures at surfaces. Nature, 437:671
-
(2005)
Nature
, vol.437
, pp. 671
-
-
Barth, J.V.1
Costantini, G.2
Kern, K.3
-
8
-
-
0035804255
-
A scheme for efficient quantum computation with linear optics
-
Knill, E, Laflamme, R, and Milburn, GJ. 2001. A scheme for efficient quantum computation with linear optics. Nature, 409:46
-
(2001)
Nature
, vol.409
, pp. 46
-
-
Knill, E.1
Laflamme, R.2
Milburn, G.J.3
-
9
-
-
0036013605
-
Quantum cryptography
-
Gisin, N, Ribordy, GG, Tittel, W, and Zbinden, H. 2002. Quantum cryptography. Rev. Mod. Phys., 74:145
-
(2002)
Rev. Mod. Phys
, vol.74
, pp. 145
-
-
Gisin, N.1
Ribordy, G.G.2
Tittel, W.3
Zbinden, H.4
-
10
-
-
0034704241
-
A quantum dot single-photon turnstile device
-
Michler, P, Kiraz, A, Becher, C, Schoenfeld, WV, Petroff, PM, Zhang, LD, Hu, E, and Imamoglu, A. 2000. A quantum dot single-photon turnstile device. Science, 290:2282
-
(2000)
Science
, vol.290
, pp. 2282
-
-
Michler, P.1
Kiraz, A.2
Becher, C.3
Schoenfeld, W.V.4
Petroff, P.M.5
Zhang, L.D.6
Hu, E.7
Imamoglu, A.8
-
11
-
-
0031123840
-
Device architecture for computing with quantum dots
-
Lent, CS, and Tougaw, PD. 1997. Device architecture for computing with quantum dots. Proc. IEEE, 85:541
-
(1997)
Proc. IEEE
, vol.85
, pp. 541
-
-
Lent, C.S.1
Tougaw, P.D.2
-
13
-
-
0141749837
-
Quantum computation with quantum dots
-
Loss, D, and DiVincenzo, DP. 1998. Quantum computation with quantum dots. Phys. Rev. A, 57:120
-
(1998)
Phys. Rev. A
, vol.57
, pp. 120
-
-
Loss, D.1
DiVincenzo, D.P.2
-
17
-
-
1842738090
-
Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates
-
Zhong, ZY, and Bauer, G. 2004. Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates. Appl. Phys. Lett., 84:1922
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 1922
-
-
Zhong, Z.Y.1
Bauer, G.2
-
18
-
-
33644864585
-
Diffusion dynamics during the nucleation and growth of Ge/Si nanostructures on Si(111)
-
Ratto, F, Locatelli, A, Fontana, S, Kharrazi, S, Ashtaputre, S, Kulkarni, SK, Heun, S, and Rosei, F. 2006. Diffusion dynamics during the nucleation and growth of Ge/Si nanostructures on Si(111). Phys. Rev. Lett., 96:096103
-
(2006)
Phys. Rev. Lett
, vol.96
, pp. 96103
-
-
Ratto, F.1
Locatelli, A.2
Fontana, S.3
Kharrazi, S.4
Ashtaputre, S.5
Kulkarni, S.K.6
Heun, S.7
Rosei, F.8
-
19
-
-
17744419680
-
Self-assembled semiconductor nanostructures: climbing up the ladder of order
-
Schmidt, OG, Kiravittaya, S, Nakamura, Y, Heidemeyer, H, Songmuang, R, Muller, C, Jin-Phillipp, NY, Eberl, K, Wawra, H, Christiansen, S, Grabeldinger, H, and Schweizer, H. 2002. Self-assembled semiconductor nanostructures:climbing up the ladder of order. Surf. Sci., 514:10
-
(2002)
Surf. Sci
, vol.514
, pp. 10
-
-
Schmidt, O.G.1
Kiravittaya, S.2
Nakamura, Y.3
Heidemeyer, H.4
Songmuang, R.5
Muller, C.6
Jin-Phillipp, N.Y.7
Eberl, K.8
Wawra, H.9
Christiansen, S.10
Grabeldinger, H.11
Schweizer, H.12
-
20
-
-
0001144969
-
Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
-
Liao, XZ, Zou, J, Cockayne, DJ, Jiang, ZM, Wang, X, and Leon, R. 2000. Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Appl. Phys. Lett., 77:1304
-
(2000)
Appl. Phys. Lett
, vol.77
, pp. 1304
-
-
Liao, X.Z.1
Zou, J.2
Cockayne, D.J.3
Jiang, Z.M.4
Wang, X.5
Leon, R.6
-
21
-
-
79956058022
-
Evolution of Ge/Si(100) island morphology at high temperature
-
Zhang, YT, Floyd, M, Driver, KP, Drucker, J, Crozier, PA, and Smith, DJ. 2002. Evolution of Ge/Si(100) island morphology at high temperature. Appl. Phys. Lett., 80:3623
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 3623
-
-
Zhang, Y.T.1
Floyd, M.2
Driver, K.P.3
Drucker, J.4
Crozier, P.A.5
Smith, D.J.6
-
22
-
-
27944446429
-
Kinetic control of Ge(Si)/Si(100) dome cluster composition
-
McDaniel, EP, Jiang, Q, Crozier, PA, Drucker, J, and Smith, DJ. 2005. Kinetic control of Ge(Si)/Si(100) dome cluster composition. Appl. Phys. Lett., 87:223101
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 223101
-
-
McDaniel, E.P.1
Jiang, Q.2
Crozier, P.A.3
Drucker, J.4
Smith, D.J.5
-
23
-
-
16244386273
-
Elastic energy mapping of epitaxial nanocrystals
-
Medeiros-Ribeiro, G, Malachias, A, Kycia, S, Magalhaes-Paniago, R, Kamins, TI, and Williams, RS. 2005. Elastic energy mapping of epitaxial nanocrystals. Appl. Phys. A:Mater. Sci. Process., 80:1211
-
(2005)
Appl. Phys. A: Mater. Sci. Process
, vol.80
, pp. 1211
-
-
Medeiros-Ribeiro, G.1
Malachias, A.2
Kycia, S.3
Magalhaes-Paniago, R.4
Kamins, T.I.5
Williams, R.S.6
-
24
-
-
2942529422
-
Selective adsorption of protein on polymer surfaces studied by soft X-ray photoemission electron microscopy
-
Morin, C, Hitchcock, AR, Cornelius, RM, Brash, JL, Urquhart, SG, Scholl, A, and Doran, A. 2004. Selective adsorption of protein on polymer surfaces studied by soft X-ray photoemission electron microscopy. J. Elect. Spectr. & Rel. Phenom., 137–40:785
-
(2004)
J. Elect. Spectr. & Rel. Phenom
, vol.137-40
, pp. 785
-
-
Morin, C.1
Hitchcock, A.R.2
Cornelius, R.M.3
Brash, J.L.4
Urquhart, S.G.5
Scholl, A.6
Doran, A.7
-
25
-
-
3042778687
-
Composition of Ge(Si) islands in the growth of Ge on Si(111)
-
Ratto, F, Rosei, F, Locatelli, A, Cherifi, S, Fontana, S, Heun, S, Szkutnik, PD, Sgarlata, A, De Crescenzi, M, and Motta, N. 2004. Composition of Ge(Si) islands in the growth of Ge on Si(111). Appl. Phys. Lett., 84:4526
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 4526
-
-
Ratto, F.1
Rosei, F.2
Locatelli, A.3
Cherifi, S.4
Fontana, S.5
Heun, S.6
Szkutnik, P.D.7
Sgarlata, A.8
De Crescenzi, M.9
Motta, N.10
-
26
-
-
32444435694
-
Chemical mapping of individual semiconductor nanostructures
-
Ratto, F, Locatelli, A, Fontana, S, Kharrazi, S, Ashtaputre, S, Kulkarni, SK, Heun, S, and Rosei, F. 2006. Chemical mapping of individual semiconductor nanostructures. Small, 2:401
-
(2006)
Small
, vol.2
, pp. 401
-
-
Ratto, F.1
Locatelli, A.2
Fontana, S.3
Kharrazi, S.4
Ashtaputre, S.5
Kulkarni, S.K.6
Heun, S.7
Rosei, F.8
-
27
-
-
13744262980
-
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy
-
Ratto, F, Rosei, F, Locatelli, A, Cherifi, S, Fontana, S, Heun, S, Szkutnik, PD, Sgarlata, A, De Crescenzi, M, and Motta, N. 2005. Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy. J. Appl. Phys., 97:043516
-
(2005)
J. Appl. Phys
, vol.97
, pp. 43516
-
-
Ratto, F.1
Rosei, F.2
Locatelli, A.3
Cherifi, S.4
Fontana, S.5
Heun, S.6
Szkutnik, P.D.7
Sgarlata, A.8
De Crescenzi, M.9
Motta, N.10
-
28
-
-
0000123224
-
Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots
-
Liu, N, Tersoff, J, Baklenov, O, Holmes, AL, and Shih, CK. 2000. Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots. Phys. Rev. Lett., 84:334
-
(2000)
Phys. Rev. Lett
, vol.84
, pp. 334
-
-
Liu, N.1
Tersoff, J.2
Baklenov, O.3
Holmes, A.L.4
Shih, C.K.5
-
29
-
-
0346034890
-
Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
-
Lenz, A, Timm, R, Eisele, H, Hennig, C, Becker, SK, Sellin, RL, Pohl, UW, Bimberg, D, and Dahne, M. 2002. Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix. Appl. Phys. Lett., 81:5150
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 5150
-
-
Lenz, A.1
Timm, R.2
Eisele, H.3
Hennig, C.4
Becker, S.K.5
Sellin, R.L.6
Pohl, U.W.7
Bimberg, D.8
Dahne, M.9
-
30
-
-
29744468617
-
Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs
-
Offermans, P, Koenraad, PM, Wolter, JH, Pierz, K, Roy, M, and Maksym, PA. 2005. Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAs. Phys. Rev. B, 72:165332
-
(2005)
Phys. Rev. B
, vol.72
, pp. 165332
-
-
Offermans, P.1
Koenraad, P.M.2
Wolter, J.H.3
Pierz, K.4
Roy, M.5
Maksym, P.A.6
-
31
-
-
13744254106
-
Strain and composition in SiGe nanoscale islands studied by x-ray scattering
-
Wiebach, T, Schmidbauer, M, Hanke, M, Raidt, H, Kohler, R, and Wawra, H. 2000. Strain and composition in SiGe nanoscale islands studied by x-ray scattering. Phys. Rev. B, 61:5571
-
(2000)
Phys. Rev. B
, vol.61
, pp. 5571
-
-
Wiebach, T.1
Schmidbauer, M.2
Hanke, M.3
Raidt, H.4
Kohler, R.5
Wawra, H.6
-
32
-
-
79956054533
-
Composition of self-assembled Ge/Si islands in single and multiple layers
-
Schmidt, OG, Denker, U, Christiansen, S, and Ernst, F. 2002. Composition of self-assembled Ge/Si islands in single and multiple layers. Appl. Phys. Lett., 81:2614
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 2614
-
-
Schmidt, O.G.1
Denker, U.2
Christiansen, S.3
Ernst, F.4
-
33
-
-
0037595553
-
Probing the lateral composition profile of self-assembled islands
-
Denker, U, Stoffel, M, and Schmidt, OG. 2003. Probing the lateral composition profile of self-assembled islands. Phys. Rev. Lett., 90:196102
-
(2003)
Phys. Rev. Lett
, vol.90
, pp. 196102
-
-
Denker, U.1
Stoffel, M.2
Schmidt, O.G.3
-
34
-
-
23944469380
-
Strain and composition profiles of self-assembled Ge/Si(001) islands
-
Alonso, MI, de la Calle, M, Osso, JO, Garriga, M, and Goni, AR. 2005. Strain and composition profiles of self-assembled Ge/Si(001) islands. J. Appl. Phys., 98:33530
-
(2005)
J. Appl. Phys
, vol.98
, pp. 33530
-
-
Alonso, M.I.1
de la Calle, M.2
Osso, J.O.3
Garriga, M.4
Goni, A.R.5
-
35
-
-
29844434188
-
Kinetic origin of island intermixing during the growth of Ge on Si(001)
-
Katsaros, G, Costantini, G, Stoffel, M, Esteban, R, Bittner, AM, Rastelli, A, Denker, U, Schmidt, OG, and Kern, K. 2005. Kinetic origin of island intermixing during the growth of Ge on Si(001). Phys. Rev. B, 72:195320
-
(2005)
Phys. Rev. B
, vol.72
, pp. 195320
-
-
Katsaros, G.1
Costantini, G.2
Stoffel, M.3
Esteban, R.4
Bittner, A.M.5
Rastelli, A.6
Denker, U.7
Schmidt, O.G.8
Kern, K.9
-
36
-
-
3342937662
-
Functional oxide nanobelts: Materials, properties and potential applications in nanosystems and biotechnology
-
Wang, ZL. 2004. Functional oxide nanobelts:Materials, properties and potential applications in nanosystems and biotechnology. Ann. Rev. Phys. Chem., 55:159
-
(2004)
Ann. Rev. Phys. Chem
, vol.55
, pp. 159
-
-
Wang, Z.L.1
-
37
-
-
0037010163
-
Nanocrystalline orthoferrite GdFeO3 from a novel heterobimetallic precursor
-
Mathur, S, Shen, H, Lecerf, N, Kjekshus, A, Fjellvag, H, and Goya, GF. 2002. Nanocrystalline orthoferrite GdFeO3 from a novel heterobimetallic precursor. Adv. Mater., 14:1405
-
(2002)
Adv. Mater
, vol.14
, pp. 1405
-
-
Mathur, S.1
Shen, H.2
Lecerf, N.3
Kjekshus, A.4
Fjellvag, H.5
Goya, G.F.6
-
38
-
-
2942554873
-
Germanium nanowires and core-shell nanostructures by chemical vapor deposition of [Ge(C5H5)(2)]
-
Mathur, S, Shen, H, Sivakov, V, and Werner, U. 2004. Germanium nanowires and core-shell nanostructures by chemical vapor deposition of [Ge(C5H5)(2)]. Chem. Mater., 16:2449
-
(2004)
Chem. Mater
, vol.16
, pp. 2449
-
-
Mathur, S.1
Shen, H.2
Sivakov, V.3
Werner, U.4
-
39
-
-
27544510727
-
Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si
-
Robinson, JT, Liddle, JA, Minor, A, Radmilovic, V, Yi, DO, Greaney, PA, Long, KN, Chrzan, DC, and Dubon, OD. 2005. Metal-induced assembly of a semiconductor island lattice:Ge truncated pyramids on Au-patterned Si. Nano Lett., 5:2070
-
(2005)
Nano Lett
, vol.5
, pp. 2070
-
-
Robinson, J.T.1
Liddle, J.A.2
Minor, A.3
Radmilovic, V.4
Yi, D.O.5
Greaney, P.A.6
Long, K.N.7
Chrzan, D.C.8
Dubon, O.D.9
-
40
-
-
3242883896
-
Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy
-
Paul, N, Asaoka, H, and Voigtlander, B. 2004. Comparison between surfactant-mediated Bi/Ge/Si(111) epitaxy and Ge/Si(111) epitaxy. Surf. Sci., 564:187
-
(2004)
Surf. Sci
, vol.564
, pp. 187
-
-
Paul, N.1
Asaoka, H.2
Voigtlander, B.3
-
41
-
-
84943994960
-
Phänomenologische theorie der kristallabscheidung an oberflächen, I-II
-
Bauer, E. 1958. Phänomenologische theorie der kristallabscheidung an oberflächen, I-II. Z. Krist., 110:372
-
(1958)
Z. Krist
, vol.110
, pp. 372
-
-
Bauer, E.1
-
42
-
-
77956666564
-
-
Woodruff D., (ed), Amsterdam: Elsevier
-
Brune, H, and Kern, K. 1997. The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Edited by:Woodruff, DAKaDP. Vol. 8, 149Amsterdam:Elsevier.
-
(1997)
The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis
, vol.8
, pp. 149
-
-
Brune, H.1
Kern, K.2
-
43
-
-
0001524479
-
Structure and growth of crystalline superlattices: From monolayer to superlattice
-
Bauer, E, and Van der Merwe, JH. 1986. Structure and growth of crystalline superlattices:From monolayer to superlattice. Phys. Rev. B, 33:3657
-
(1986)
Phys. Rev. B
, vol.33
, pp. 3657
-
-
Bauer, E.1
Van der Merwe, J.H.2
-
44
-
-
0037048087
-
Self-assembling and ordering of Ge/Si(111) quantum dots: scanning microscopy probe studies
-
Motta, N. 2002. Self-assembling and ordering of Ge/Si(111) quantum dots:scanning microscopy probe studies. J. Phys.:Cond. Matt., 14:8353
-
(2002)
J. Phys.: Cond. Matt
, vol.14
, pp. 8353
-
-
Motta, N.1
-
47
-
-
21544472035
-
Dislocations and strain relief in compositionally graded layers
-
Tersoff, J. 1993. Dislocations and strain relief in compositionally graded layers. Appl. Phys. Lett., 62:693
-
(1993)
Appl. Phys. Lett
, vol.62
, pp. 693
-
-
Tersoff, J.1
-
48
-
-
0001390252
-
Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
-
Jesson, DE, Pennycook, SJ, Baribeau, JM, and Houghton, DC. 1993. Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation. Phys. Rev. Lett., 71:1744
-
(1993)
Phys. Rev. Lett
, vol.71
, pp. 1744
-
-
Jesson, D.E.1
Pennycook, S.J.2
Baribeau, J.M.3
Houghton, D.C.4
-
49
-
-
0000567899
-
Stress and relief of misfit strain of Ge/Si(001)
-
Wedler, G, Walz, J, Hesjedal, T, Chilla, E, and Koch, R. 1998. Stress and relief of misfit strain of Ge/Si(001). Phys. Rev. Lett., 80:2382
-
(1998)
Phys. Rev. Lett
, vol.80
, pp. 2382
-
-
Wedler, G.1
Walz, J.2
Hesjedal, T.3
Chilla, E.4
Koch, R.5
-
50
-
-
0000929339
-
Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)
-
Boscherini, F, Capellini, G, Di Gaspare, L, Rosei, F, Motta, N, and Mobilio, S. 2000. Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111). Appl. Phys. Lett., 76:682
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 682
-
-
Boscherini, F.1
Capellini, G.2
Di Gaspare, L.3
Rosei, F.4
Motta, N.5
Mobilio, S.6
-
51
-
-
3042774722
-
3D composition of epitaxial nanocrystals by anomalous x-ray diffraction: Observation of a Si-rich core in Ge domes on Si(100)
-
Malachias, A, Kycia, S, Medeiros-Ribeiro, G, Magalhaes-Paniago, R, Kamins, TI, and Williams, RS. 2003. 3D composition of epitaxial nanocrystals by anomalous x-ray diffraction:Observation of a Si-rich core in Ge domes on Si(100). Phys. Rev. Lett., 91:176101
-
(2003)
Phys. Rev. Lett
, vol.91
, pp. 176101
-
-
Malachias, A.1
Kycia, S.2
Medeiros-Ribeiro, G.3
Magalhaes-Paniago, R.4
Kamins, T.I.5
Williams, R.S.6
-
52
-
-
17944374339
-
Strain and composition distribution in uncapped SiGe islands from x-ray diffraction
-
Stangl, J, Daniel, A, Holy, V, Roch, T, Bauer, G, Kegel, I, Metzger, TH, Wiebach, T, Schmidt, OG, and Eberl, K. 2001. Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. Appl. Phys. Lett., 79:1474
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 1474
-
-
Stangl, J.1
Daniel, A.2
Holy, V.3
Roch, T.4
Bauer, G.5
Kegel, I.6
Metzger, T.H.7
Wiebach, T.8
Schmidt, O.G.9
Eberl, K.10
-
53
-
-
0003202981
-
SiGe intermixing in Ge/Si(100) islands
-
Capellini, G, De Seta, M, and Evangelisti, F. 2001. SiGe intermixing in Ge/Si(100) islands. Appl. Phys. Lett., 78:303
-
(2001)
Appl. Phys. Lett
, vol.78
, pp. 303
-
-
Capellini, G.1
De Seta, M.2
Evangelisti, F.3
-
54
-
-
0037116130
-
Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge: Si(001) self-assembled islands by anomalous x-ray scattering
-
Magalhaes-Paniago, R, Medeiros-Ribeiro, G, Malachias, A, Kycia, S, Kamins, TI, and Williams, RS. 2002. Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering. Phys. Rev. B, 66:245312
-
(2002)
Phys. Rev. B
, vol.66
, pp. 245312
-
-
Magalhaes-Paniago, R.1
Medeiros-Ribeiro, G.2
Malachias, A.3
Kycia, S.4
Kamins, T.I.5
Williams, R.S.6
-
55
-
-
4244182686
-
Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy
-
Kolobov, AV, Oyanagi, H, Wei, SQ, Brunner, K, Abstreiter, G, and Tanaka, K. 2002. Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy. Phys. Rev. B, 66:75319
-
(2002)
Phys. Rev. B
, vol.66
, pp. 75319
-
-
Kolobov, A.V.1
Oyanagi, H.2
Wei, S.Q.3
Brunner, K.4
Abstreiter, G.5
Tanaka, K.6
-
56
-
-
1642402284
-
Evolution of the intermixing process in Ge/Si(111) self-assembled islands
-
Motta, N, Rosei, F, Sgarlata, A, Capellini, G, Mobilio, S, and Boscherini, F. 2002. Evolution of the intermixing process in Ge/Si(111) self-assembled islands. Mat. Sci. Eng. B, 88:264
-
(2002)
Mat. Sci. Eng. B
, vol.88
, pp. 264
-
-
Motta, N.1
Rosei, F.2
Sgarlata, A.3
Capellini, G.4
Mobilio, S.5
Boscherini, F.6
-
57
-
-
0037416601
-
Nanometer-scale composition measurements of Ge/Si(100) islands
-
Floyd, M, Zhang, YT, Driver, KP, Drucker, J, Crozier, PA, and Smith, DJ. 2003. Nanometer-scale composition measurements of Ge/Si(100) islands. Appl. Phys. Lett., 82:1473
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 1473
-
-
Floyd, M.1
Zhang, Y.T.2
Driver, K.P.3
Drucker, J.4
Crozier, P.A.5
Smith, D.J.6
-
58
-
-
20144365362
-
Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping
-
Schulli, TU, Stoffel, M, Hesse, A, Stangl, J, Lechner, RT, Wintersberger, E, Sztucki, M, Metzger, TH, Schmidt, OG, and Bauer, G. 2005. Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping. Phys. Rev. B, 71:35326
-
(2005)
Phys. Rev. B
, vol.71
, pp. 35326
-
-
Schulli, T.U.1
Stoffel, M.2
Hesse, A.3
Stangl, J.4
Lechner, R.T.5
Wintersberger, E.6
Sztucki, M.7
Metzger, T.H.8
Schmidt, O.G.9
Bauer, G.10
-
59
-
-
0037113459
-
Monte Carlo studies of stress fields and intermixing in Ge/Si(100) quantum dots
-
Sonnet, P, and Kelires, PC. 2002. Monte Carlo studies of stress fields and intermixing in Ge/Si(100) quantum dots. Phys. Rev. B, 66:205307
-
(2002)
Phys. Rev. B
, vol.66
, pp. 205307
-
-
Sonnet, P.1
Kelires, P.C.2
-
60
-
-
33749159026
-
Critical aspects of alloying and stress relaxation in Ge/Si(100) islands
-
Hadjisavvas, G, and Kelires, PC. 2005. Critical aspects of alloying and stress relaxation in Ge/Si(100) islands. Phys. Rev. B, 72:75334
-
(2005)
Phys. Rev. B
, vol.72
, pp. 75334
-
-
Hadjisavvas, G.1
Kelires, P.C.2
-
61
-
-
29644435494
-
Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
-
Lang, C, Cockayne, DJH, and Nguyen-Manh, D. 2005. Alloyed Ge(Si)/Si(001) islands:The composition profile and the shape transformation. Phys. Rev. B, 72:155328
-
(2005)
Phys. Rev. B
, vol.72
, pp. 155328
-
-
Lang, C.1
Cockayne, D.J.H.2
Nguyen-Manh, D.3
-
62
-
-
0032292334
-
Dome-to-pyramid transition induced by alloying of Ge islands on Si(001)
-
Kamins, TI, Medeiros-Ribeiro, G, Ohlberg, DAA, and Williams, RS. 1998. Dome-to-pyramid transition induced by alloying of Ge islands on Si(001). Appl. Phys. A:Mater. Sci. Process., 67:727
-
(1998)
Appl. Phys. A: Mater. Sci. Process
, vol.67
, pp. 727
-
-
Kamins, T.I.1
Medeiros-Ribeiro, G.2
Ohlberg, D.A.A.3
Williams, R.S.4
-
63
-
-
3442895826
-
Strain-driven alloying in Ge/Si(100) coherent islands
-
Chaparro, SA, Drucker, J, Zhang, Y, Chandrasekhar, D, McCartney, MR, and Smith, DJ. 1999. Strain-driven alloying in Ge/Si(100) coherent islands. Phys. Rev. Lett., 83:1199
-
(1999)
Phys. Rev. Lett
, vol.83
, pp. 1199
-
-
Chaparro, S.A.1
Drucker, J.2
Zhang, Y.3
Chandrasekhar, D.4
McCartney, M.R.5
Smith, D.J.6
-
64
-
-
0348223267
-
Nonuniform alloying in Ge(Si)/Si(001) quantum dots
-
Lang, C, Nguyen-Manh, D, and Cockayne, DJH. 2003. Nonuniform alloying in Ge(Si)/Si(001) quantum dots. J. Appl. Phys., 94:7067
-
(2003)
J. Appl. Phys
, vol.94
, pp. 7067
-
-
Lang, C.1
Nguyen-Manh, D.2
Cockayne, D.J.H.3
-
65
-
-
79956037436
-
Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate
-
Raiteri, P, Miglio, L, Valentinotti, F, and Celino, M. 2002. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate. Appl. Phys. Lett., 80:3736
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 3736
-
-
Raiteri, P.1
Miglio, L.2
Valentinotti, F.3
Celino, M.4
-
66
-
-
0000548181
-
Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy (vol 79, pg 905, 1997)
-
Yu, WB, and Madhukar, A. 1997. Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy (vol 79, pg 905, 1997). Phys. Rev. Lett., 79:4939
-
(1997)
Phys. Rev. Lett
, vol.79
, pp. 4939
-
-
Yu, W.B.1
Madhukar, A.2
-
67
-
-
0034899101
-
Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands
-
Spencer, BJ, and Tersoff, J. 2001. Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands. Phys. Rev. B, 63:205424
-
(2001)
Phys. Rev. B
, vol.63
, pp. 205424
-
-
Spencer, B.J.1
Tersoff, J.2
-
68
-
-
1142292401
-
Intermixing in Ge hut cluster islands
-
Denker, U, Sigg, H, and Schmidt, OG. 2004. Intermixing in Ge hut cluster islands. Appl. Surf. Sci., 224:127
-
(2004)
Appl. Surf. Sci
, vol.224
, pp. 127
-
-
Denker, U.1
Sigg, H.2
Schmidt, O.G.3
-
69
-
-
27744577658
-
Modeling solid-state chemistry: Interatomic potentials for multicomponent systems
-
Tersoff, J. 1989. Modeling solid-state chemistry:Interatomic potentials for multicomponent systems. Phys. Rev. B, 39:5566
-
(1989)
Phys. Rev. B
, vol.39
, pp. 5566
-
-
Tersoff, J.1
-
70
-
-
30244494913
-
Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2X1 surface
-
Kelires, PC, and Tersoff, J. 1989. Equilibrium alloy properties by direct simulation:Oscillatory segregation at the Si-Ge(100) 2X1 surface. Phys. Rev. Lett., 63:1164
-
(1989)
Phys. Rev. Lett
, vol.63
, pp. 1164
-
-
Kelires, P.C.1
Tersoff, J.2
-
71
-
-
42749107912
-
Simulation of Ge/Si intermixing during heteroepitaxy
-
Wagner, RJ, and Gulari, E. 2004. Simulation of Ge/Si intermixing during heteroepitaxy. Phys. Rev. B, 69:195312
-
(2004)
Phys. Rev. B
, vol.69
, pp. 195312
-
-
Wagner, R.J.1
Gulari, E.2
-
72
-
-
0141758403
-
Reconstruction and intermixing in thin Ge layers on Si(001)
-
Nurminen, L, Tavazza, F, Landau, DP, Kuronen, A, and Kaski, K. 2003. Reconstruction and intermixing in thin Ge layers on Si(001). Phys. Rev. B, 68:085326
-
(2003)
Phys. Rev. B
, vol.68
, pp. 85326
-
-
Nurminen, L.1
Tavazza, F.2
Landau, D.P.3
Kuronen, A.4
Kaski, K.5
-
73
-
-
0001044603
-
Ge-Si intermixing at the Ge/Si(001) surface
-
Cho, JH, and Kang, MH. 2000. Ge-Si intermixing at the Ge/Si(001) surface. Phys. Rev. B, 61:1688
-
(2000)
Phys. Rev. B
, vol.61
, pp. 1688
-
-
Cho, J.H.1
Kang, M.H.2
-
74
-
-
11444249525
-
Segregation in SiGe clusters
-
Tarus, J, Tantarimaki, M, and Nordlund, K. 2005. Segregation in SiGe clusters. Nucl. Instr. Meth. Phys. Res. B, 228:51
-
(2005)
Nucl. Instr. Meth. Phys. Res. B
, vol.228
, pp. 51
-
-
Tarus, J.1
Tantarimaki, M.2
Nordlund, K.3
-
75
-
-
0033521177
-
Transition states between pyramids and domes during Ge/Si island growth
-
Ross, FM, Tromp, RM, and Reuter, MC. 1999. Transition states between pyramids and domes during Ge/Si island growth. Science, 286:1931
-
(1999)
Science
, vol.286
, pp. 1931
-
-
Ross, F.M.1
Tromp, R.M.2
Reuter, M.C.3
-
76
-
-
42749103632
-
Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)
-
Montalenti, F, Raiteri, P, Migas, DB, von Kanel, H, Rastelli, A, Manzano, C, Costantini, G, Denker, U, Schmidt, OG, Kern, K, and Miglio, L. 2004. Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001). Phys. Rev. Lett., 93:216102
-
(2004)
Phys. Rev. Lett
, vol.93
, pp. 216102
-
-
Montalenti, F.1
Raiteri, P.2
Migas, D.B.3
von Kanel, H.4
Rastelli, A.5
Manzano, C.6
Costantini, G.7
Denker, U.8
Schmidt, O.G.9
Kern, K.10
Miglio, L.11
-
77
-
-
27144546641
-
Kinetic evolution and equilibrium morphology of strained islands
-
Rastelli, A, Stoffel, M, Tersoff, J, Kar, GS, and Schmidt, OG. 2005. Kinetic evolution and equilibrium morphology of strained islands. Phys. Rev. Lett., 95:026103
-
(2005)
Phys. Rev. Lett
, vol.95
, pp. 26103
-
-
Rastelli, A.1
Stoffel, M.2
Tersoff, J.3
Kar, G.S.4
Schmidt, O.G.5
-
78
-
-
27744441979
-
Lateral motion of SiGe islands driven by surface-mediated alloying
-
Denker, U, Rastelli, A, Stoffel, M, Tersoff, J, Katsaros, G, Costantini, G, Kern, K, Jin-Phillipp, NY, Jesson, DE, and Schmidt, OG. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Phys. Rev. Lett., 94:216103
-
(2005)
Phys. Rev. Lett
, vol.94
, pp. 216103
-
-
Denker, U.1
Rastelli, A.2
Stoffel, M.3
Tersoff, J.4
Katsaros, G.5
Costantini, G.6
Kern, K.7
Jin-Phillipp, N.Y.8
Jesson, D.E.9
Schmidt, O.G.10
-
79
-
-
36149047583
-
Atomic diffusion in semiconductors
-
Willoughby, AFW. 1978. Atomic diffusion in semiconductors. Rep. Prog. Phys., 41:1665
-
(1978)
Rep. Prog. Phys
, vol.41
, pp. 1665
-
-
Willoughby, A.F.W.1
-
80
-
-
0035356458
-
Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure
-
Sugii, N. 2001. Thermal stability of the strained-Si/Si0.7Ge0.3 heterostructure. J. Appl. Phys., 89:6459
-
(2001)
J. Appl. Phys
, vol.89
, pp. 6459
-
-
Sugii, N.1
-
81
-
-
36549091634
-
Interdiffusion in a symmetrically strained Ge/Si superlattice
-
Chang, SJ, Wang, KL, Bowman, RC, and Adams, PM. 1989. Interdiffusion in a symmetrically strained Ge/Si superlattice. Appl. Phys. Lett., 54:1253
-
(1989)
Appl. Phys. Lett
, vol.54
, pp. 1253
-
-
Chang, S.J.1
Wang, K.L.2
Bowman, R.C.3
Adams, P.M.4
-
82
-
-
21544482355
-
Luminescence study on interdiffusion in strained Si1-XGeX/Si single quantum-wells grown by molecular-beam epitaxy
-
Sunamura, H, Fukatsu, S, Usami, N, and Shiraki, Y. 1993. Luminescence study on interdiffusion in strained Si1-XGeX/Si single quantum-wells grown by molecular-beam epitaxy. Appl. Phys. Lett., 63:1651
-
(1993)
Appl. Phys. Lett
, vol.63
, pp. 1651
-
-
Sunamura, H.1
Fukatsu, S.2
Usami, N.3
Shiraki, Y.4
-
83
-
-
0001087533
-
Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells
-
Boucaud, P, Wu, L, Guedj, C, Julien, FH, Sajnes, I, Campidelli, Y, and Garchery, L. 1996. Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells. J. Appl. Phys., 80:1414
-
(1996)
J. Appl. Phys
, vol.80
, pp. 1414
-
-
Boucaud, P.1
Wu, L.2
Guedj, C.3
Julien, F.H.4
Sajnes, I.5
Campidelli, Y.6
Garchery, L.7
-
84
-
-
0035886182
-
Ge/Si interdiffusion in the GeSi dots and wetting layers
-
Wan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ, and Zou, J. 2001. Ge/Si interdiffusion in the GeSi dots and wetting layers. J. Appl. Phys., 90:4290
-
(2001)
J. Appl. Phys
, vol.90
, pp. 4290
-
-
Wan, J.1
Luo, Y.H.2
Jiang, Z.M.3
Jin, G.4
Liu, J.L.5
Wang, K.L.6
Liao, X.Z.7
Zou, J.8
-
85
-
-
0037099429
-
Stress induced surface melting during the growth of the Ge wetting layer on Si(001) and Si(111)
-
Rosei, F, and Raiteri, P. 2002. Stress induced surface melting during the growth of the Ge wetting layer on Si(001) and Si(111). Appl. Surf. Sci., 195:16
-
(2002)
Appl. Surf. Sci
, vol.195
, pp. 16
-
-
Rosei, F.1
Raiteri, P.2
-
86
-
-
18744371598
-
Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
-
Aubertine, DB, Mander, MA, Ozguven, N, Marshall, AF, McIntyre, PC, Chu, JO, and Mooney, PM. 2002. Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers. J. Appl. Phys., 92:5027
-
(2002)
J. Appl. Phys
, vol.92
, pp. 5027
-
-
Aubertine, D.B.1
Mander, M.A.2
Ozguven, N.3
Marshall, A.F.4
McIntyre, P.C.5
Chu, J.O.6
Mooney, P.M.7
-
87
-
-
0001096552
-
Diffusion of Ge below the Si(100) surface: Theory and experiment
-
Uberuaga, BP, Leskovar, M, Smith, AP, Jonsson, H, and Olmstead, M. 2000. Diffusion of Ge below the Si(100) surface:Theory and experiment. Phys. Rev. Lett., 84:2441
-
(2000)
Phys. Rev. Lett
, vol.84
, pp. 2441
-
-
Uberuaga, B.P.1
Leskovar, M.2
Smith, A.P.3
Jonsson, H.4
Olmstead, M.5
-
88
-
-
3342968424
-
Activation-energy for surface diffusion of Si on Si(001): A Scanning-tunneling-microscopy study
-
Mo, YW, Kleiner, J, Webb, MB, and Lagally, MG. 1991. Activation-energy for surface diffusion of Si on Si(001):A Scanning-tunneling-microscopy study. Phys. Rev. Lett., 66:1998
-
(1991)
Phys. Rev. Lett
, vol.66
, pp. 1998
-
-
Mo, Y.W.1
Kleiner, J.2
Webb, M.B.3
Lagally, M.G.4
-
89
-
-
33751047359
-
Large-scale ab-initio study of the binding and diffusion of a Ge adatom on the Si(100) surface
-
Milman, V, Jesson, DE, Pennycook, SJ, Payne, MC, Lee, MH, and Stich, I. 1994. Large-scale ab-initio study of the binding and diffusion of a Ge adatom on the Si(100) surface. Phys. Rev. B, 50:2663
-
(1994)
Phys. Rev. B
, vol.50
, pp. 2663
-
-
Milman, V.1
Jesson, D.E.2
Pennycook, S.J.3
Payne, M.C.4
Lee, M.H.5
Stich, I.6
-
90
-
-
0033314713
-
Nanometer-scale imaging of strain in Ge island on Si(001) surface
-
Ide, T, Sakai, A, and Shimizu, K. 1999. Nanometer-scale imaging of strain in Ge island on Si(001) surface. Thin Solid Films, 357:22
-
(1999)
Thin Solid Films
, vol.357
, pp. 22
-
-
Ide, T.1
Sakai, A.2
Shimizu, K.3
-
91
-
-
25444493569
-
Studying the lateral composition in Ge quantum dots on Si(001) by conductive atomic force microscopy
-
Xue, F, Qin, J, Cui, J, Fan, YL, Jiang, ZM, and Yang, XJ. 2005. Studying the lateral composition in Ge quantum dots on Si(001) by conductive atomic force microscopy. Surf. Sci., 592:65
-
(2005)
Surf. Sci
, vol.592
, pp. 65
-
-
Xue, F.1
Qin, J.2
Cui, J.3
Fan, Y.L.4
Jiang, Z.M.5
Yang, X.J.6
-
92
-
-
0034894682
-
Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001)
-
Heun, S, Watanabe, Y, Ressel, B, Bottomley, D, Schmidt, T, and Prince, KC. 2001. Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001). Phys. Rev. B, 63:125335
-
(2001)
Phys. Rev. B
, vol.63
, pp. 125335
-
-
Heun, S.1
Watanabe, Y.2
Ressel, B.3
Bottomley, D.4
Schmidt, T.5
Prince, K.C.6
-
94
-
-
28844459840
-
Shape and composition map of a prepyramid quantum dot
-
Spencer, BJ, and Blanariu, M. 2005. Shape and composition map of a prepyramid quantum dot. Phys. Rev. Lett., 95:206101
-
(2005)
Phys. Rev. Lett
, vol.95
, pp. 206101
-
-
Spencer, B.J.1
Blanariu, M.2
-
95
-
-
2142653300
-
Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux
-
Rastelli, A, von Känel, H, Albini, G, Raiteri, P, Migas, DB, and Miglio, L. 2003. Morphological and compositional evolution of the Ge/Si(001) surface during exposure to a Si flux. Phys. Rev. Lett., 90:216104
-
(2003)
Phys. Rev. Lett
, vol.90
, pp. 216104
-
-
Rastelli, A.1
von Känel, H.2
Albini, G.3
Raiteri, P.4
Migas, D.B.5
Miglio, L.6
-
96
-
-
0026896874
-
Layer-by-layer growth of germanium on Si(100): Strain-induced morphology and the influence of surfactants
-
Kohler, U, Jusko, O, Muller, B, Hornvonhoegen, M, and Pook, M. 1992. Layer-by-layer growth of germanium on Si(100):Strain-induced morphology and the influence of surfactants. Ultramicroscopy, 42:832
-
(1992)
Ultramicroscopy
, vol.42
, pp. 832
-
-
Kohler, U.1
Jusko, O.2
Muller, B.3
Hornvonhoegen, M.4
Pook, M.5
-
97
-
-
0028383337
-
STM study of the Ge growth mode on Si(001) substrates
-
Tomitori, M, Watanabe, K, Kobayashi, M, and Nishikawa, O. 1994. STM study of the Ge growth mode on Si(001) substrates. Appl. Surf. Sci., 76:322
-
(1994)
Appl. Surf. Sci
, vol.76
, pp. 322
-
-
Tomitori, M.1
Watanabe, K.2
Kobayashi, M.3
Nishikawa, O.4
-
98
-
-
32644464066
-
Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands
-
Huang, L, Liu, F, Lu, GH, and Gong, XG. 2006. Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands. Phys. Rev. Lett., 96:16103
-
(2006)
Phys. Rev. Lett
, vol.96
, pp. 16103
-
-
Huang, L.1
Liu, F.2
Lu, G.H.3
Gong, X.G.4
-
99
-
-
0036716627
-
Surface evolution of faceted islands
-
Rastelli, A, and von Känel, H. 2002. Surface evolution of faceted islands. Surf. Sci., 515:L493
-
(2002)
Surf. Sci
, vol.515
, pp. L493
-
-
Rastelli, A.1
von Känel, H.2
-
100
-
-
85024184365
-
-
(in preparation)
-
Katsaros, G, Rastelli, A, Stoffel, M, Acosta-Diaz, P, Schmidt, OG, Costantini, G, and Kern, K. (in preparation)
-
-
-
Katsaros, G.1
Rastelli, A.2
Stoffel, M.3
Acosta-Diaz, P.4
Schmidt, O.G.5
Costantini, G.6
Kern, K.7
-
101
-
-
0000326270
-
Evolution of Ge islands on Si(001) during annealing
-
Kamins, TI, Medeiros-Ribeiro, G, Ohlberg, DAA, and Williams, RS. 1999. Evolution of Ge islands on Si(001) during annealing. J. Appl. Phys., 85:1159
-
(1999)
J. Appl. Phys
, vol.85
, pp. 1159
-
-
Kamins, T.I.1
Medeiros-Ribeiro, G.2
Ohlberg, D.A.A.3
Williams, R.S.4
-
102
-
-
85024236446
-
-
(submitted)
-
Stoffel, M, Rastelli, A, Merdzhanova, T, and Schmidt, OG. (submitted)
-
-
-
Stoffel, M.1
Rastelli, A.2
Merdzhanova, T.3
Schmidt, O.G.4
-
103
-
-
33746840111
-
Investigating the lateral motion of SiGe islands by selective chemical etching
-
Katsaros, G, Rastelli, A, Stoffel, M, Isella, G, von Kanel, H, Bittner, AM, Tersoff, J, Denker, U, Schmidt, OG, Costantini, G, and Kern, K. 2006. Investigating the lateral motion of SiGe islands by selective chemical etching. Surf. Sci., 600:2606
-
(2006)
Surf. Sci
, vol.600
, pp. 2606
-
-
Katsaros, G.1
Rastelli, A.2
Stoffel, M.3
Isella, G.4
von Kanel, H.5
Bittner, A.M.6
Tersoff, J.7
Denker, U.8
Schmidt, O.G.9
Costantini, G.10
Kern, K.11
|