Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4188-4192

  Nguyen, K B ^a   Cardinale, G F ^a   Tichenor, D A ^a   Kubiak, G D ^a   Berger, K ^a   Ray Chaudhuri, A K ^a   Perras, Y ^a   Haney, S J ^a   Nissen, R ^a   Krenz, K ^a   Stulen, R H ^a   Fujioka, H ^b   Hu, C ^b   Bokor, J ^b   Tennant, D M ^c   Fetter, L A ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344438790     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588618     Document Type: Article

References (8)

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5. D. A. Tichenor et al, in Extreme Ultraviolet Lithography (Optical Society of America, Boston, MA, 1996).
6. K. B. Nguyen et al., in Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI (SPIE, Santa Clara, CA. 1996).
7. D. M. Tennant et al, J. Vac. Sci. Technol. B 9, 3176 (1991).
8. G. D. Kubiak et al, Appl. Opt. 32, 7036 (1993).