Electron-hole drops in silicon with dislocations

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12813-12818

  Drozdov, N ^a   Fedotov, A ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HOLE MOBILITY; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; POINT DEFECTS;

ELECTRON-HOLE DROPS; EXCITATION INTENSITY; RECOMBINATION RADIATION;

SEMICONDUCTING SILICON;

EID: 0037122123     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/320     Document Type: Article

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