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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453071-2453074

Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy

(5) Meixner, M a Scholl E a Schmidbauer, M b Raidt, H b Kohler R b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b HUMBOLDT UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM DERIVATIVE; SILICON DERIVATIVE;

ANISOTROPY; ARTICLE; ELASTICITY; KINETICS; PHYSICS; SEMICONDUCTOR; SIMULATION; SYSTEM ANALYSIS;

EID: 0035894521 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.245307 Document Type: Article

Times cited : (63)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.