Site-control of InAs quantum dots using Ex-situ electron-beam lithographic patterning of GaAs substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2519-2521

  Atkinson, P ^a   Ward, M B ^b   Bremner, S P ^a   Anderson, D ^a   Farrow, T ^b   Jones, G A C ^a   Shields, A J ^b   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic force microscopy; InAs quantum dots; Molecular beam epitaxy; Nucleatlon site control; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

INAS QUANTUM DOTS; NUCLEATLON SITE CONTROL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33645654613     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2519     Document Type: Article

References (20)

1. R. M. Stevenson, R. M. Thompson, A. J. Shields, I. Farrer, B. E. Kardynal, D. A. Ritchie and M. Pepper: Phys. Rev. B 66 (2002) 081302.
2. E. Knill, R. Laflamrae and G. J. Milburn: Nature 409 (2001) 46.
3. A. Imamoglu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin and A. Small: Phys. Rev. Lett. 83 (1999) 4204.
4. Z. Yuan, B. E. Kardynal, R. M. Stevenson, A. J. Shields, C. J. Lobo, K. Cooper, N. S. Beattie, D. A. Ritchie and M. Pepper: Science 295 (2002) 102.
5. D. Leonard, K. Pond and P. M. Petroff: Phys. Rev. B 50 ( 1994) 11687.
6. M. Kitamura, M. Nishioka, J. Ohinowo and Y. Arakawa: Appl. Phys. Lett. 66 (1995) 3663.
7. H. Lee, J. A. Johnson, J. S. Speck and P. M. Petroff: J. Vac. Sci. Technol. B 18 (2000) 2193.
8. Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillip, S. Kiravittaya, C. Mueller, K. Eberl, H. Graebeldinger and H. Schweizer: J. Cryst. Growth 242 (2002) 339.
9. D. S. L. Mui, D. Leonard, L. A. Coldren and P. M. Petroff: Appl. Phys. Lett. 66 (1995) 1620.
10. R. Zhang, R. Tsui, K. Shiralagi, D. Convey and H. Goronkin: Appl. Phys. Lett. 73 (1998) 505.
11. G. Jin, J. L. Liu, S. G. Thomas, Y. H. Luo and K. L. Wang: Appl. Phys. Lett. 75 (1999) 2752.
12. S. Jeppesen, M. S. Miller, B. Kowalski, I. Maximov and L. Samuelson: Superlattices Microstruct. 23 (1998) 1347.
13. T. Ishikawa, T. Nishimura, S. Kohmoto and K. Asakawa: Appl. Phys. Lett. 76 (2000) 167.
14. Y. Nakamura, N. Ikeda, S. Ohkouchi, Y. Sugimoto, H. Nakamura and K. Asakawa: Physica E 21 (2004) 551.
15. S. Kiravittaya, H. Heidemeyer and O. G. Schmidt: Physica E 23 (2004) 253.
16. H. Heidemeyer, C. Muller and O. G. Schmidt: J. Cryst. Growth 261 (2004) 444.
17. S. Kohmoto, H. Nakamura, T. Ishikawa, S. Nishikawa, T. Nishimura and K. Asakawa: Mater. Sci. Eng. B 88 (2002) 292.
18. H. Z. Song, Y. Nakata, Y. Okada, T. Miyazawa, T. Ohshima, M. Takatsu, M. Kawabe and N. Yokoyama: Physica E 21 (2004) 625.
19. S. Koshiba, Y. Nakamura, M. Tsuchiya, H. Noge, H. Kano, Y. Nagamune, T. Noda and H. Sakaki; J. Appl. Phys. 76 (1994) 4138.
20. Q. Xie, A. Madhukar, P. Chen and N. P. Kobayashi: Phys. Rev. Lett. 75 (1995) 2542.