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Surface Science

Volumn 438, Issue 1-3, 1999, Pages 131-141

Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy

(6) Dabiran, A M a Seutter, S M a Stoyanov, S b Bartelt, M C c Evans, J W d Cohen, P I a

a University of Minnesota (United States)

b INSTITUTE OF PHYSICAL CHEMISTRY (Bulgaria)

c SANDIA NATIONAL LABORATORIES (United States)

d IOWA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MONTE CARLO METHODS; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; SURFACES; TIN;

STEP EDGE BARRIERS; STEP EDGE RELAXATION;

MOLECULAR BEAM EPITAXY;

EID: 0033318675 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(99)00562-2 Document Type: Article

Times cited : (4)

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