Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 95-101

  Ronda, A ^a   Berbezier, I ^a   Pascale, A ^a   Portavoce, A ^a   Volpi, F ^a  

^a CAMPUS DE LUMINY   (France)

Author keywords

Epitaxy; Instability; Nanostructures; Self organization; Silicon Germanium

Indexed keywords

CRYSTAL ORIENTATION; DIFFUSION; EVAPORATORS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SILICON; SUBSTRATES;

SUBSTRATE ORIENTATIONS; SURFACE DIFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1642361142     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00661-X     Document Type: Conference Paper

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