Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes

Nanotechnology

Volumn 17, Issue 20, 2006, Pages 5207-5211

  Ferng, Shyh Shin ^a   Yang, Tsung Hsi ^a   Luo, Guangli ^b   Yang, Kai Ming ^a   Hsieh, Ming Feng ^a   Lin, Deng Sung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; ANISOTROPIC WET CHEMICAL ETCHING; NANO-ISLANDS;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; GERMANIUM; PHOTOLITHOGRAPHY; SILICON; SUBSTRATES;

NANOSTRUCTURED MATERIALS;

EID: 33749529754     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/20/027     Document Type: Article

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