Ge quantum dots growth on nanopatterned Si(0 0 1) surface: Morphology and stress relaxation study

Surface Science

Volumn 600, Issue 16, 2006, Pages 3187-3193

  Pascale, A ^a,b   Gentile, P ^a   Eymery, J ^a   Meziere J ^b   Bavard, A ^a,b   Schulli T U ^a   Fournel, F ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

Ge; GIXRD; Growth; Molecular bonding; nanopatterning; Quantum dots; Self organization; Si(0 0 1); STM

Indexed keywords

ANNEALING; GERMANIUM; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; STRESS RELAXATION; X RAY DIFFRACTION ANALYSIS;

GIXRD; MOLECULAR BONDING; SELF-ORGANIZATION; SI(0 0 1);

SILICON;

EID: 33747757532     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.06.004     Document Type: Article

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