Ge islands on Si (111) at coverages near the transition from two-dimensional to three-dimensional growth

Surface Science

Volumn 416, Issue 1-2, 1998, Pages 192-199

  Shklyaev, Alexander A ^a,b   Shibata, Motoshi ^b   Ichikawa, Masakazu ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Electron microscopy; Epitaxy; Germanium; Nucleation; Semiconductor semiconductor heterostructures; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

HETEROJUNCTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; THREE DIMENSIONAL; TWO DIMENSIONAL;

HETEROEPITAXY; SCANNING REFLECTION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 0032180306     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00580-9     Document Type: Article

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