Evolution of the Ge/Si(001) wetting layer during Si overgrowth and crossover between thermodynamic and kinetic behavior

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 23, 2004, Pages

  Migas, D B ^a   Raiteri, P ^a   Miglio, Leo ^a   Rastelli, A ^b,c   Von Kanel H ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

AB INITIO CALCULATION; ARTICLE; KINETICS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SIMULATION; THERMODYNAMICS;

EID: 42749099321     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.235318     Document Type: Article

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