Artificially size- and position-controlled Ge dot formation using patterned Si

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 190-193

  Suda, Yoshiyuki ^a   Kaechi, Shuya ^a   Kitayama, Daisuke ^a   Yoshizawa, Taichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Dot; Ge; Light emitting Devices; Migration; Nanoelectronic devices; Patterned structures

Indexed keywords

ANNEALING; ETCHING; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTOLITHOGRAPHY; SILICON; STRAIN; THERMAL EFFECTS;

DOT; LIGHT-EMITTING DEVICES; MIGRATION; NANOELECTRONIC DEVICES; PATTERNED STRUCTURES;

GERMANIUM;

EID: 4544246814     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.028     Document Type: Article

References (8)

1. Pei Z., Chen P.S., Lai L.S., Lu S.C., Tsai M.-J., Chang W.H., Chen W.Y., Chou A.T., Hsu T.M. Proc. 1st Int. SiGe Technol. and Device Meeting. 2003;191 CCRAST and RIEC, Nagoya.
2. Jin G., Liu J.L., Thomas S.G., Luo Y.H., Wang K.L., Nguyen B.Y. Appl. Phys. Lett. 75:1999;2752.
3. Yang B., Woll A.R., Rugheimer P., Lagally M.G. Mat. Res. Soc. Symp. Proc. 715:2002;A8.5.1 MRS, Boston.
4. Kim E.S., Usami N., Shiraki Y. Appl. Phys. Lett. 72:1998;1617.
5. Vescan L., Stoica T., Holländer B., Nassiopoulou A., Olzierski A., Raotis I., Sutter E. Appl. Phys. Lett. 82:2003;3517.
6. Bauer G., Darhuber A.A., Holý V. Cryst. Res. Technol. 34:1999;197.
7. Zhong Z., Halilovic A., Mühlberger M., Scäffler F., Bauer G. Appl. Phys. Lett. 82:2003;445.
8. LeThanh V., Yam V., Meneceur N., Boucaud P., Débarre D., Bouchier D. Mater. Phys. Mech. 4:2001;94.