Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 369-374

  Zheng, Y B ^a,b   Chua, S J ^a,b   Huan, C H A ^a,b   Miao, Z L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Quantum dots; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SURFACE TREATMENT;

NANOCAVITIES; SUBSTRATE SURFACE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142762419     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.056     Document Type: Conference Paper

References (24)

1. Honda Y., Kawaguchi Y., Ohtake Y., Tanaka S., Yamaguchi M., Sawaki N. J. Crystal Growth. 230:2001;346.
2. Mei X., Kim D., Ruda H.E., Guo Q.X. Appl. Phys. Lett. 81:2002;361.
3. Lee S.C., Malloy K.J., Dawson L.R., Brueck S.R.J. J. Appl. Phys. 92:2002;6567.
4. Kamins T.I., Ohlberg D.A.A., Williams R.S., Zhang W., Chou S.Y. Appl. Phys. Lett. 74:1999;1773.
5. Temmyo Jiro, Kuramochi Eiichi, Kamada Hidehiko, Tamamura Toshiaki J. Crystal Growth. 195:1998;516.
6. Nakamura Y., Schmidt O.G., Jin-Phillipp N.Y., Kiravittaya S., Müller C., Eberl K., Gräbeldinger H., Schweizer H. J. Crystal Growth. 242:2002;339.
7. Liang Jianyu, Chik Hope, Yin Aijun, Xu Jimmy J. Appl. Phys. 91:2002;2544.
8. Nishi K., Anan T., Gomyo A., Kohmoto S., Sogou S. Appl. Phys. Lett. 70:1997;3579.
9. Lan S., Akahane K., Jang K.Y., Kawamura T., Okada Y., Kawabe M. Jpn. J. Appl. Phys Part 1. 38:1998;1090.
10. Lan S., Akahane K., Song H.Z., Okada Y., Kawabe M. J. Vac. Sci. Technol. B. 17:1999;1105.
11. Kohmoto S., Ishikawa T., Asakawa K. Jpn. J. Appl. Phys. Part 1. 38:1998;1075.
12. Ishikawa T., Kohmoto S., Asakawa K. Appl. Phys. Lett. 73:1998;1712.
13. Deckman H.W., Dunsmuir J.H. Appl. Phys. Lett. 41:1982;377.
14. Hulteen J.C., Van Duyne R.P. J. Vac. Sci. Technol. A. 13:1995;1553.
15. Hulteen J.C., Treichel D.A., Smith M.T., Duval M.L., Jensen T.R., Van Duyne R.P. J. Phys. Chem. B. 103:1999;3854.
16. Haes A.J., Hayns C.L., van Duyne R.P. Mater. Res. Soc. Symp. 636:2001;D481.
17. Russell B.K., Mantovani J.G., Anderson V.E., Warmack R.J., Ferrell T.L. Phys. Rev. B. 35:1987;2151.
18. Buncick M.C., Warmack R.J., Ferrell T.L. J. Opt. Soc. Am. B4:1987;927.
19. Wachter E.A., Moore A., Haas J.W. III Vib. Spectrosc. 3:1992;73.
20. Fang H., Zeller R., Stiles P.J. Appl. Phys. Lett. 55:1989;1433.
21. Iwabuchi T., Chuang C., Khitrova G., Warren M.E., Chavez-Pirson A., Gibbs H.M., Sarid D., Gallagher M. SPIE. 1284:1990;142.
22. Green M., Garci-Parajo M., Khaleque F. Appl. Phys. Lett. 62:1993;264.
23. Gerardot B.D., Subramanian G., Minvielle S., Lee H., Johnson J.A., Schoenfeld W.V., Pine D., Speck J.S., Petroff P.M. J. Crystal Growth. 236:2002;647.
24. Wiesendanger R., Bode M., Kleiber M., Lahndorf M., Pascal R., Wadas A. J. Vac. Sci. Technol. B. 15:1997;1330.