Correlated growth in ultrathin pentacene films on silicon oxide: Effect of deposition rate

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 16, 2004, Pages

  Pratontep, Sirapat ^a   Brinkmann, Martin ^a   Nüesch, Frank ^b   Zuppiroli, Libero ^b  

^a INSTITUT CHARLES SADRON   (France)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; FILM; GROWTH; TEMPERATURE;

EID: 37649026902     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.165201     Document Type: Article

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25. CZ) multiplied by a geometrical factor depending on the shape and the spatial distributions of the grains. Since the Gamma distributions of CZ are similar at all deposition rates, we may assume that this geometrical factor does not change significantly with the rate.