Reliability of GaN-based HEMT devices

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2008, Pages 44-50

  Menozzi, Roberto ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

Gallium nitride; HEMTs; Nitride devices; Reliability

Indexed keywords

CURRENT COLLAPSE; DEGRADATION MECHANISMS; HEMTS; LIFE-TESTING; PAST AND PRESENTS;

APPROXIMATION THEORY; DEGRADATION; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; RELIABILITY; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 64849088886     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2008.4802089     Document Type: Conference Paper

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