Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting

Microelectronics Reliability

Volumn 44, Issue 7, 2004, Pages 1033-1038

  Chou, Y C ^a   Leung, D ^a   Smorchkova, I ^a   Wojtowicz, M ^a   Grundbacher, R ^a   Callejo, L ^a   Kan, Q ^a   Lai, R ^a   Liu, P H ^a   Eng, D ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; ENERGY GAP; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY THEORY; SILICON CARBIDE; TRANSCONDUCTANCE;

BAND GAP; DRAIN CURRENT; EPITAXIAL MATERIALS; RELIABILITY EVALUATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2942733261     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.03.008     Document Type: Conference Paper

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